VISHAY · FETs & Power MOSFETs · MPN SIAA00DJ-T1-GE3
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 19.2W |
| RDS(on) | 7.5mΩ@4.5V |
| Type | N-Channel |
25V 40A 2.5V 19.2W 7.5mΩ@4.5V N-Channel PowerPAKSC-70-6 Single FETs, MOSFETs RoHS