VISHAY · FETs & Power MOSFETs · MPN SIA975DJ-T1-GE3
No reviews yet — be the first to review VISHAY SIA975DJ-T1-GE3.
| Current - Continuous Drain(Id) | 8A |
|---|---|
| Pd - Power Dissipation | 7.8W |
| RDS(on) | 110mΩ@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 12V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Gate Charge(Qg) | 26nC@8V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 260pF |
8A 7.8W 110mΩ@1.8V 1V 2 P-Channel PowerPAK-SC-70-6 FET, MOSFET Arrays RoHS