VISHAY · FETs & Power MOSFETs · MPN SIA923EDJ-T4-GE3
No reviews yet — be the first to review VISHAY SIA923EDJ-T4-GE3.
| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| Pd - Power Dissipation | 5W |
| RDS(on) | 165mΩ@1.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 25nC@8V |
| Operating Temperature | -55℃~+150℃ |
4.5A 5W 165mΩ@1.5V 1.4V 2 P-Channel PowerPAK-SC-70-6-Dual FET, MOSFET Arrays RoHS