VISHAY SIA923AEDJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA923AEDJ-T1-GE3

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Specifications

Current - Continuous Drain(Id)4.5A
Pd - Power Dissipation7.8W
RDS(on)165mΩ@1.5V
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)81pF
Number2 P-Channel
Input Capacitance(Ciss)770pF
Gate Charge(Qg)25nC@8V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)90pF

Technical details

P-Channel 20V 4.5A 7.8W Surface Mount PowerPAK-SC-70-6

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