VISHAY · FETs & Power MOSFETs · MPN SIA921EDJ-T4-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| RDS(on) | 98mΩ@2.5V |
| Pd - Power Dissipation | 7.8W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Number | 2 P-Channel |
| Gate Charge(Qg) | 23nC@10V |
| Operating Temperature | -55℃~+150℃ |
4.5A 98mΩ@2.5V 7.8W 1.4V 2 P-Channel SC-70-6 FET, MOSFET Arrays RoHS