VISHAY · FETs & Power MOSFETs · MPN SIA918EDJ-T1-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| RDS(on) | 46mΩ@4.5V |
| Pd - Power Dissipation | 5W |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 3.6nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
4.5A 46mΩ@4.5V 5W 400mV 2 N-Channel PowerPAK-SC-70-6L FET, MOSFET Arrays RoHS