VISHAY · FETs & Power MOSFETs · MPN SIA907EDJT-T1-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| RDS(on) | 57mΩ@4.5V |
| Pd - Power Dissipation | 1.9W |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 4.9nC@10V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 20V 4.5A 1.9W Surface Mount PowerPAK-SC-70-6L