VISHAY · FETs & Power MOSFETs · MPN SIA906EDJ-T1-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| Pd - Power Dissipation | 7.8W |
| RDS(on) | 63mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 37pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 350pF |
| Gate Charge(Qg) | 12nC@10V |
| Vgs | ±12V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 4.5A Surface Mount WSON-6-EP(2x2)