VISHAY · FETs & Power MOSFETs · MPN SIA817EDJ-T1-GE3
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| Gate Charge(Qg) | 6.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 6.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 125mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 600pF |
| Type | P-Channel |
P-Channel 30V 4.5A 6.5W Surface Mount PowerPAK-SC-70-6