VISHAY · FETs & Power MOSFETs · MPN SIA533EDJ-T1-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| RDS(on) | 59mΩ@4.5V |
| Pd - Power Dissipation | 1.9W |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Drain to Source Voltage | 12V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 545pF |
| Gate Charge(Qg) | 7.8nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 12V 4.5A 1.9W Surface Mount PowerPAK-SC-70-6-Dual