VISHAY SIA527DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA527DJ-T1-GE3

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Specifications

Current - Continuous Drain(Id)4.5A
Pd - Power Dissipation7.8W
RDS(on)174mΩ@1.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)250pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)10.5nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 12V 4.5A 7.8W Surface Mount PowerPAK-SC-70-6

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