VISHAY · FETs & Power MOSFETs · MPN SIA519EDJ-T1-GE3
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| Current - Continuous Drain(Id) | 4.5A |
|---|---|
| Pd - Power Dissipation | 7.8W |
| RDS(on) | 137mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Drain to Source Voltage | 20V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 350pF |
| Gate Charge(Qg) | 16nC@10V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 340pF |
N-Channel+P-Channel Array 20V 4.5A 7.8W Surface Mount PowerPAK-SC-70-6