VISHAY SIA517DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA517DJ-T1-GE3

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Specifications

Current - Continuous Drain(Id)4.5A
RDS(on)24mΩ@4.5V
Pd - Power Dissipation5W
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage12V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)100pF;250pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)590pF
Gate Charge(Qg)8.2nC@4.5V
Vgs±8V
Operating Temperature-55℃~+150℃

Technical details

N-Channel+P-Channel Array 12V 4.5A 5W Surface Mount PowerPAK-SC-70-6-Dual

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