VISHAY · FETs & Power MOSFETs · MPN SIA485DJ-T1-GE3
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| Gate Charge(Qg) | 4.2nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 8pF |
| Current - Continuous Drain(Id) | 1.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.5pF |
| RDS(on) | 2.6Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 155pF |
| Type | P-Channel |
P-Channel 150V 1.6A 2.9W Surface Mount PowerPAK-SC-70-6L