VISHAY SIA483DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA483DJ-T1-GE3

No reviews yet — be the first to review VISHAY SIA483DJ-T1-GE3.

Specifications

Configuration-
Gate Charge(Qg)21nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)175pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)30mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.55nF

Technical details

P-Channel 30V 12A 19W Surface Mount PowerPAK-SC-70-6

Related FETs & Power MOSFETs