VISHAY · FETs & Power MOSFETs · MPN SIA483ADJ-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12.5nC@4.5V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 3.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 20mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 950pF |
P-Channel 30V 12A 3.4W PowerPAKSC-70-6L