VISHAY · FETs & Power MOSFETs · MPN SIA477EDJT-T1-GE3
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| Gate Charge(Qg) | 33nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 13mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.05nF |
| Type | P-Channel |
P-Channel 12V 12A Surface Mount PowerPAK-SC-70-6L