VISHAY · FETs & Power MOSFETs · MPN SIA477EDJ-T1-GE3
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| Gate Charge(Qg) | 34.7nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 724pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.97nF |
12V 12A 400mV 3.5W 1 P-Channel PowerPAK-SC-70-6L Single FETs, MOSFETs RoHS