VISHAY SIA471DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA471DJ-T1-GE3

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Specifications

Gate Charge(Qg)8.9nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)570pF
Current - Continuous Drain(Id)30.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation12.3W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)14mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.17nF
TypeP-Channel

Technical details

P-Channel 30V 30.3A 12.3W Surface Mount PowerPAKSC-70-6

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