VISHAY SIA469DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA469DJ-T1-GE3

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Specifications

Gate Charge(Qg)10nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation10W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)26.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.02nF
TypeP-Channel

Technical details

P-Channel 30V 12A 10W Surface Mount PowerPAK-SC-70-6-Single

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