VISHAY SIA468DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA468DJ-T1-GE3

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Specifications

Gate Charge(Qg)8.2nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)16.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)8.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.29nF

Technical details

30V 16.1A 2.4V 3.5W 8.4mΩ@10V 1 N-channel PowerPAK-SC-70-6L Single FETs, MOSFETs RoHS

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