VISHAY · FETs & Power MOSFETs · MPN SIA468DJ-T1-GE3
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| Gate Charge(Qg) | 8.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 16.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.29nF |
30V 16.1A 2.4V 3.5W 8.4mΩ@10V 1 N-channel PowerPAK-SC-70-6L Single FETs, MOSFETs RoHS