VISHAY SIA462DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA462DJ-T1-GE3

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Specifications

Gate Charge(Qg)5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)52pF
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)570pF

Technical details

N-Channel 30V 12A 3.5W Surface Mount PowerPAK-SC-70-6L

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