VISHAY SIA461DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA461DJ-T1-GE3

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Specifications

Gate Charge(Qg)18nC@8V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation3.4W
Reverse Transfer Capacitance (Crss@Vds)180pF
RDS(on)33mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.3nF
TypeP-Channel

Technical details

P-Channel 20V 8.3A 3.4W Surface Mount PowerPAK-SC-70-6L

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