VISHAY · FETs & Power MOSFETs · MPN SIA456DJ-T3-GE3
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| Gate Charge(Qg) | 5nC@4.5V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 12pF |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 19W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 3.5Ω@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
200V 2.6A 1.4V 19W 3.5Ω@1.8V 1 N-channel N-Channel PowerPAK-SC-70-6 Single FETs, MOSFETs RoHS