VISHAY SIA447DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA447DJ-T1-GE3

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Specifications

Gate Charge(Qg)31nC@4.5V
Drain to Source Voltage12V
Output Capacitance(Coss)590pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)585pF
RDS(on)13.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.88nF
TypeP-Channel

Technical details

P-Channel 12V 12A 3.5W Surface Mount PowerPAK-SC-70-6

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