VISHAY · FETs & Power MOSFETs · MPN SIA445EDJ-T1-GE3
No reviews yet — be the first to review VISHAY SIA445EDJ-T1-GE3.
| Gate Charge(Qg) | 72nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 290pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 12W |
| Reverse Transfer Capacitance (Crss@Vds) | 280pF |
| RDS(on) | 30mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.13nF |
| Type | P-Channel |
P-Channel 20V 12A 12W Surface Mount PowerPAK-SC-70-6