VISHAY · FETs & Power MOSFETs · MPN SIA4446DJ-T1-GE3
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| Output Capacitance(Coss) | 180pF |
|---|---|
| Pd - Power Dissipation | 19.2W |
| Configuration | - |
| Gate Charge(Qg) | 19nC@10V |
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 31A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Reverse Transfer Capacitance (Crss@Vds) | 28pF |
| RDS(on) | 15mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 915pF |
19.2W 40V 31A 2.4V 15mΩ@4.5V 1 N-channel N-Channel Single FETs, MOSFETs RoHS