VISHAY SIA437DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA437DJ-T1-GE3

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Specifications

Gate Charge(Qg)28nC@8V
Drain to Source Voltage20V
Current - Continuous Drain(Id)12.6A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)14.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.34nF

Technical details

20V 12.6A 400mV 3.5W 14.5mΩ@4.5V 1 P-Channel PowerPAK-SC-70-6L Single FETs, MOSFETs RoHS

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