VISHAY · FETs & Power MOSFETs · MPN SIA4371EDJ-T1-GE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10.6nC@10V |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 2.9W |
| RDS(on) | 45mΩ@10V |
| Number | 1 P-Channel |
30V 6.4A 600mV 2.9W 45mΩ@10V 1 P-Channel PowerPAKSC-70-6 Single FETs, MOSFETs RoHS