VISHAY · FETs & Power MOSFETs · MPN SIA436DJ-T4-GE3
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| Gate Charge(Qg) | 25.2nC@5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 2.9W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 36mΩ@1.2V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.508nF |
| Type | N-Channel |
8V 12A 800mV 2.9W 36mΩ@1.2V 1 N-channel N-Channel PowerPAK-SC-70-6 Single FETs, MOSFETs RoHS