VISHAY SIA432DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA432DJ-T1-GE3

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Specifications

Gate Charge(Qg)5.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)10.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)20mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

N-Channel 30V 10.1A 3.5W Surface Mount PowerPAK-SC-70-6-Single

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