VISHAY SIA431DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA431DJ-T1-GE3

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Specifications

Gate Charge(Qg)60nC@8V
Drain to Source Voltage20V
Output Capacitance(Coss)230pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))850mV
Pd - Power Dissipation19W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)70mΩ@1.5V
Number1 P-Channel
Input Capacitance(Ciss)1.7nF
TypeP-Channel

Technical details

P-Channel 20V 12A 19W Surface Mount SC-70-6(SOT-363)

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