VISHAY · FETs & Power MOSFETs · MPN SIA430DJT-T1-GE3
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| Gate Charge(Qg) | 5.3nC |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 200pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 19.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 10.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
| Vgs | ±20V |
N-Channel 20V Surface Mount PowerPAK-SC-70-6L