VISHAY · FETs & Power MOSFETs · MPN SIA4265EDJ-T1-GE3
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| Gate Charge(Qg) | 13.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 135pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 10W |
| RDS(on) | 26.5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.18nF |
| Vgs | ±8V |
20V 6A 400mV 10W 26.5mΩ@4.5V 1 P-Channel P-Channel PowerPAKSC-70-6 Single FETs, MOSFETs RoHS