VISHAY · FETs & Power MOSFETs · MPN SIA4263DJ-T1-GE3
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| Gate Charge(Qg) | 19.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 210pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 3.29W |
| RDS(on) | 19.9mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.825nF |
| Type | P-Channel |
P-Channel 20V 12A 3.29W PowerPAKSC-70-6L