VISHAY · FETs & Power MOSFETs · MPN SIA400EDJ-T1-GE3
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| Gate Charge(Qg) | 11.6nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 12.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 19mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.265nF |
30V 12A 12.3W Surface Mount PowerPAK-SC-70-6L