VISHAY · FETs & Power MOSFETs · MPN SIA110DJ-T1-GE3
No reviews yet — be the first to review VISHAY SIA110DJ-T1-GE3.
| Gate Charge(Qg) | 6.5nC |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 50pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 550pF |
| Vgs | ±20V |
100V 12A 4V 3.5W 55mΩ@10V 1 N-channel N-Channel PowerPAKSC-70-6 Single FETs, MOSFETs RoHS