VISHAY SIA108DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA108DJ-T1-GE3

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Specifications

Drain to Source Voltage80V
Gate Charge(Qg)13nC@10V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.5W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)46mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)545pF
TypeN-Channel

Technical details

N-Channel 80V 12A 3.5W Surface Mount PowerPAK-SC-70-6

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