VISHAY SIA106DJ-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIA106DJ-T1-GE3

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Specifications

Gate Charge(Qg)6.9nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation3.5W
RDS(on)18.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)540pF
TypeN-Channel

Technical details

N-Channel 60V 12A 3.5W Surface Mount PowerPAKSC-70-6

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