VISHAY SI9933CDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI9933CDY-T1-GE3

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Specifications

Current - Continuous Drain(Id)4A
RDS(on)94mΩ@2.5V
Pd - Power Dissipation3.1W
Gate Threshold Voltage (Vgs(th))1.4V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)115pF
Number2 P-Channel
Input Capacitance(Ciss)665pF
Gate Charge(Qg)26nC@10V
Operating Temperature-50℃~+150℃
Output Capacitance(Coss)140pF

Technical details

P-Channel 20V 4A 3.1W Surface Mount SO-8

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