VISHAY SI9926CDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI9926CDY-T1-GE3

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Specifications

Current - Continuous Drain(Id)8.2A
Pd - Power Dissipation2W
RDS(on)20mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)3.2pF
Number2 N-Channel
Input Capacitance(Ciss)1.2nF
Gate Charge(Qg)20nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 8.2A 2W Surface Mount SO-8

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