VISHAY · FETs & Power MOSFETs · MPN SI9926CDY-T1-E3
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| Current - Continuous Drain(Id) | 8A |
|---|---|
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 22mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.2nF |
| Gate Charge(Qg) | 10nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 8A 3.1W Surface Mount SO-8