VISHAY SI9433BDY-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI9433BDY-T1-E3

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Specifications

Gate Charge(Qg)14nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)40mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 20V 6.2A 2.5W Surface Mount SO-8

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