VISHAY SI9407BDY-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI9407BDY-T1-GE3

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)70pF
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)50pF
RDS(on)150mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)600pF
TypeP-Channel

Technical details

P-Channel 60V 4.7A 5W Surface Mount SO-8

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