VISHAY · FETs & Power MOSFETs · MPN SI9407BDY-T1-E3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 8nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 120mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 600pF |
P-Channel 60V 4.7A 2.4W Surface Mount SO-8