VISHAY · FETs & Power MOSFETs · MPN SI8902AEDB-T2-E1
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| Current - Continuous Drain(Id) | 5.9A |
|---|---|
| RDS(on) | - |
| Pd - Power Dissipation | 1.7W |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 24V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
5.9A 1.7W 900mV 1 N-channel MicroFoot-6 FET, MOSFET Arrays RoHS