VISHAY · FETs & Power MOSFETs · MPN SI8851EDB-T2-E1
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| Gate Charge(Qg) | 180nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 660mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 8mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.9nF |
20V 7.7A 450mV 660mW 8mΩ@4.5V 1 P-Channel MicroFoot-30 Single FETs, MOSFETs RoHS