VISHAY · FETs & Power MOSFETs · MPN SI8823EDB-T2-E1
No reviews yet — be the first to review VISHAY SI8823EDB-T2-E1.
| Output Capacitance(Coss) | 165pF |
|---|---|
| Pd - Power Dissipation | 500mW |
| Configuration | - |
| Gate Charge(Qg) | 6.6nC |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 95mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 580pF |
500mW 20V 2.7A 400mV 95mΩ@4.5V 1 P-Channel P-Channel MicroFoot-4 Single FETs, MOSFETs RoHS