VISHAY · FETs & Power MOSFETs · MPN SI8821EDB-T2-E1
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| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 2.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 135mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 440pF |
30V 2.3A 600mV 500mW 135mΩ@4.5V 1 P-Channel XFBGA-4 Single FETs, MOSFETs RoHS