VISHAY · FETs & Power MOSFETs · MPN SI8817DB-T2-E1
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| Gate Charge(Qg) | 12.5nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 90pF |
| Current - Continuous Drain(Id) | 2.9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| RDS(on) | 320mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 615pF |
| Type | P-Channel |
20V 2.9A 1V 900mW 320mΩ@1.5V 1 P-Channel P-Channel X-FBGA-4 Single FETs, MOSFETs RoHS